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Indium Fluoride Sputtering Target

CAS #: 7783-52-0
Linear Formula:
InF3
MDL Number
MFCD00016149
EC No.:
232-005-0

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(3N) 99.9% Indium Fluoride Sputtering Target IN-F-03-ST SDS > Data Sheet >
(4N) 99.99% Indium Fluoride Sputtering Target IN-F-04-ST SDS > Data Sheet >
(5N) 99.999% Indium Fluoride Sputtering Target IN-F-05-ST SDS > Data Sheet >
WHOLESALE/SKU 0000-742-12378

Indium Fluoride Sputtering Target Properties (Theoretical)

Compound Formula InF3
Molecular Weight 171.81
Appearance Target
Melting Point 1,172° C (2,142° F)
Boiling Point N/A
Density 171.82 g/cm3
Solubility in H2O N/A
Exact Mass 171.899
Monoisotopic Mass 171.899

Indium Fluoride Sputtering Target Health & Safety Information

Signal Word Warning
Hazard Statements H315-H319-H335
Hazard Codes Xi
Precautionary Statements P305 + P351 + P338
Flash Point Not applicable
Risk Codes 31-36/37/38
Safety Statements 26-36
RTECS Number N/A
Transport Information NONH for all modes of transport
WGK Germany 3
GHS Pictogram
Image
Exclamation Point - GHS07

About Indium Fluoride Sputtering Target

American Elements specializes in producing high purity Indium Fluoride Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Indium Fluoride as rods, powder and plates. Other shapes are available by request.

Synonyms

N/A

Chemical Identifiers

Linear Formula InF3
Pubchem CID 82212
MDL Number MFCD00016149
EC No. 232-005-0
IUPAC Name trifluoroindigane
Beilstein/Reaxys No. N/A
SMILES F[In](F)F
InchI Identifier InChI=1S/3FH.In/h3*1H;/q;;;+3/p-3
InchI Key JNLSTWIBJFIVHZ-UHFFFAOYSA-K
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

Fluorine is a Block P, Group 17, Period 2 element. Its electron configuration is [He]2s22p5. The fluorine atom has a covalent radius of 64 pm and its Van der Waals radius is 135 pm. In its elemental form, CAS 7782-41-4, fluorine gas has a pale yellow appearance. Fluorine was discovered by André-Marie Ampère in 1810. It was first isolated by Henri Moissan in 1886.