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Gallium Nitride Sputtering Target

CAS #: 25617-97-4
Linear Formula:
GaN
MDL Number
MFCD00016108
EC No.:
247-129-0

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Gallium Nitride Sputtering Target GA-N-02-ST SDS > Data Sheet >
(3N) 99.9% Gallium Nitride Sputtering Target GA-N-03-ST SDS > Data Sheet >
(4N) 99.99% Gallium Nitride Sputtering Target GA-N-04-ST SDS > Data Sheet >
(5N) 99.999% Gallium Nitride Sputtering Target GA-N-05-ST SDS > Data Sheet >
WHOLESALE/SKU 0000-742-11784

Gallium Nitride Sputtering Target Properties (Theoretical)

Compound Formula GaN
Molecular Weight 83.73
Appearance Solid
Melting Point N/A
Boiling Point N/A
Density N/A
Solubility in H2O N/A
Exact Mass 82.9287
Monoisotopic Mass 82.7297

Gallium Nitride Sputtering Target Health & Safety Information

Signal Word Warning
Hazard Statements H317
Hazard Codes N/A
Risk Codes N/A
Safety Statements 22-24/25
RTECS Number LW9640000
Transport Information N/A
WGK Germany 3

About Gallium Nitride Sputtering Target

American Elements specializes in producing high purity Gallium Nitride Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please contact us for information on lead time and pricing above.

Synonyms

N/A

Chemical Identifiers

Linear Formula GaN
Pubchem CID 117559
MDL Number MFCD00016108
EC No. 247-129-0
IUPAC Name azanylidynegallane
Beilstein/Reaxys No. N/A
SMILES [Ga]#N
InchI Identifier InChI=1S/Ga.N
InchI Key JMASRVWKEDWRBT-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia' referring to Gaul, the old name of France.

See more Nitrogen products. Nitrogen is a Block P, Group 15, Period 2 element. Its electron configuration is [He]2s22p3. Nitrogen is an odorless, tasteless, colorless and mostly inert gas. It is the seventh most abundant element in the universe and it constitutes 78.09% (by volume) of Earth's atmosphere. Nitrogen was discovered by Daniel Rutherford in 1772.