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Gallium Arsenide Sputtering Target

CAS #: 1303-00-0
Linear Formula:
GaAs
MDL Number
MFCD00011017
EC No.:
215-114-8

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Gallium Arsenide Sputtering Target GA-AS-02-ST SDS > Data Sheet >
(2N5) 99.5% Gallium Arsenide Sputtering Target GA-AS-025-ST SDS > Data Sheet >
(3N) 99.9% Gallium Arsenide Sputtering Target GA-AS-03-ST SDS > Data Sheet >
(3N5) 99.95% Gallium Arsenide Sputtering Target GA-AS-035-ST SDS > Data Sheet >
(4N) 99.99% Gallium Arsenide Sputtering Target GA-AS-04-ST SDS > Data Sheet >
(5N) 99.999% Gallium Arsenide Sputtering Target GA-AS-05-ST SDS > Data Sheet >
WHOLESALE/SKU 0000-742-11748

Gallium Arsenide Sputtering Target Properties (Theoretical)

Compound Formula AsGa
Molecular Weight 144.64 g/mol
Appearance Gray Cubic Crystals
Melting Point 1400 °C (2550 °F)
Boiling Point N/A
Density 5.3 g/cm3
Solubility in H2O N/A
Exact Mass 143.847 g/mol
Monoisotopic Mass 143.847 g/mol
Poisson's Ratio 0.31
Young's Modulus 85 GPa
Thermal Conductivity 47 W/m-K
Thermal Expansion 5.6 µm/m-K
Specific Heat 360 J/kg-K
Refractive Index 3.4

Gallium Arsenide Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information N/A

About Gallium Arsenide Sputtering Target

American Elements specializes in producing high purity Gallium Arsenide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or Arsenide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes. We also produce Gallium as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Synonyms

N/A

Chemical Identifiers

Linear Formula GaAs
Pubchem CID 14770
MDL Number MFCD00011017
EC No. 215-114-8
IUPAC Name gallanylidynearsane
Beilstein/Reaxys No. N/A
SMILES [As]#[Ga]
InchI Identifier InChI=1S/As.Ga
InchI Key JBRZTFJDHDCESZ-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia' referring to Gaul, the old name of France.